AP9970AGP-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9970AGP-HF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 333 W
Предельно допустимое напряжение сток-исток (Uds): 60 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Максимально допустимый постоянный ток стока (Id): 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 170 nC
Время нарастания (tr): 130 ns
Выходная емкость (Cd): 1150 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.003 Ohm
Тип корпуса: TO-220
Аналог (замена) для AP9970AGP-HF
AP9970AGP-HF Datasheet (PDF)
1.1. ap9970agp-hf.pdf 
Size:93K _a-power
AP9970AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3m? Ў RoHS Compliant & Halogen-Free ID 250A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and co
1.2. ap9970agp.pdf Size:149K _a-power
AP9970AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 60V ▼ ▼ ▼ ▼ Lower On-resistance RDS(ON) 3mΩ ▼ ▼ ▼ ▼ RoHS Compliant & Halogen-Free ID 235A ▼ ▼ ▼ G S Description AP9970A series are from Advanced Power innovated design and silicon process technology to achiev
4.1. ap9970gp-hf.pdf Size:94K _a-power
AP9970GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.2m? Ў RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance an
4.2. ap9970gw-hf.pdf Size:93K _a-power
AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.2m? Ў RoHS Compliant & Halogen-Free ID 240A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and c
4.3. ap9970gw.pdf Size:211K _a-power
AP9970GW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 60V ▼ Lower On-resistance RDS(ON) 3.2mΩ ▼ RoHS Compliant & Halogen-Free ID3 240A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast
4.4. ap9970gk.pdf Size:136K _a-power
AP9970GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Lower Gate Charge RDS(ON) 50mΩ S ▼ Fast Switching Characteristic ID 5.8A D ▼ RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch
4.5. ap9970gi-hf.pdf Size:92K _a-power
AP9970GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 3.2m? Ў RoHS Compliant & Halogen-Free ID 100A G S Description AP9970 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and fast swit
4.6. ap9970gk-hf.pdf Size:58K _a-power
AP9970GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 60V D Ў Lower Gate Charge RDS(ON) 50m? S Ў Fast Switching Characteristic ID 5.8A D Ў RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low
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