AP9972AGR-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9972AGR-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO-262

 Búsqueda de reemplazo de AP9972AGR-HF MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP9972AGR-HF datasheet

 ..1. Size:95K  ape
 ap9972agr-hf.pdf pdf_icon

AP9972AGR-HF

AP9972AGR-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 60A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 6.1. Size:154K  ape
 ap9972agp.pdf pdf_icon

AP9972AGR-HF

AP9972AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Simple Drive Requirement RDS(ON) 16m Fast Switching Performance ID 60A G RoHS Compliant & Halogen-Free S Description AP9972A series are from Advanced Power innovated desi

 6.2. Size:95K  ape
 ap9972agi.pdf pdf_icon

AP9972AGR-HF

AP9972AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G low on-resistance and

 6.3. Size:95K  ape
 ap9972agp-hf.pdf pdf_icon

AP9972AGR-HF

AP9972AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 16m Fast Switching Performance ID 60A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi

MOSTRAR MÁS

Otros transistores... AP9971GH, AP9971GI-HF, AP9971GJ, AP9971GM-HF, AP9971GP-HF, AP9971GS-HF, AP9972AGI, AP9972AGP-HF, IRLB3034, AP9972GH-HF, AP9972GI-HF, AP9972GP-HF, AP9972GR, AP9972GS-HF, AP9973GD, AP9973GH-HF, AP9973GI