AP9973GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9973GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 77 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO-252

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AP9973GH-HF datasheet

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 ap9973gh-hf ap9973gj-hf.pdf pdf_icon

AP9973GH-HF

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H)

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 ap9973gh.pdf pdf_icon

AP9973GH-HF

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description AP9973 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible

 7.1. Size:60K  ape
 ap9973gd.pdf pdf_icon

AP9973GH-HF

AP9973GD Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 80m D1 PDIP-8 Package ID 3.9A RoHS Compliant G2 S2 PDIP-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru

 7.2. Size:62K  ape
 ap9973gp ap9973gs.pdf pdf_icon

AP9973GH-HF

AP9973GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, low o

MOSTRAR MÁS

Otros transistores... AP9972AGP-HF, AP9972AGR-HF, AP9972GH-HF, AP9972GI-HF, AP9972GP-HF, AP9972GR, AP9972GS-HF, AP9973GD, MMIS60R580P, AP9973GI, AP9973GJ-HF, AP9973GM, AP9973GP, AP9973GS, AP9974AGH-HF, AP9974AGP-HF, AP9974AGS-HF