AP9973GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9973GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 77 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO-251

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AP9973GJ-HF datasheet

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 ap9973gh-hf ap9973gj-hf.pdf pdf_icon

AP9973GJ-HF

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H)

 6.1. Size:199K  ape
 ap9973gj.pdf pdf_icon

AP9973GJ-HF

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description AP9973 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible

 6.2. Size:822K  cn vbsemi
 ap9973gj.pdf pdf_icon

AP9973GJ-HF

AP9973GJ www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secondar

 7.1. Size:60K  ape
 ap9973gd.pdf pdf_icon

AP9973GJ-HF

AP9973GD Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 80m D1 PDIP-8 Package ID 3.9A RoHS Compliant G2 S2 PDIP-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru

MOSTRAR MÁS

Otros transistores... AP9972GH-HF, AP9972GI-HF, AP9972GP-HF, AP9972GR, AP9972GS-HF, AP9973GD, AP9973GH-HF, AP9973GI, AO4407A, AP9973GM, AP9973GP, AP9973GS, AP9974AGH-HF, AP9974AGP-HF, AP9974AGS-HF, AP9974BGP, AP9974GH-HF