AP9973GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9973GM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SO-8

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AP9973GM datasheet

 ..1. Size:62K  ape
 ap9973gm.pdf pdf_icon

AP9973GM

AP9973GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D2 D2 Single Drive Requirement RDS(ON) 80m D1 D1 Surface Mount Package ID 3.9A G2 RoHS Compliant S2 G1 SO-8 S1 Description D2 The Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switchi

 7.1. Size:60K  ape
 ap9973gd.pdf pdf_icon

AP9973GM

AP9973GD Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Low Gate Charge BVDSS 60V D2 D1 Fast Switching Speed RDS(ON) 80m D1 PDIP-8 Package ID 3.9A RoHS Compliant G2 S2 PDIP-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru

 7.2. Size:62K  ape
 ap9973gp ap9973gs.pdf pdf_icon

AP9973GM

AP9973GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, low o

 7.3. Size:98K  ape
 ap9973gh-hf ap9973gj-hf.pdf pdf_icon

AP9973GM

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H)

MOSTRAR MÁS

Otros transistores... AP9972GI-HF, AP9972GP-HF, AP9972GR, AP9972GS-HF, AP9973GD, AP9973GH-HF, AP9973GI, AP9973GJ-HF, 60N06, AP9973GP, AP9973GS, AP9974AGH-HF, AP9974AGP-HF, AP9974AGS-HF, AP9974BGP, AP9974GH-HF, AP9974GJ-HF