AP9973GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9973GM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: SO-8
- Selección de transistores por parámetros
AP9973GM Datasheet (PDF)
ap9973gm.pdf

AP9973GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD2D2 Single Drive Requirement RDS(ON) 80mD1D1 Surface Mount Package ID 3.9AG2 RoHS CompliantS2G1SO-8 S1DescriptionD2The Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switchi
ap9973gd.pdf

AP9973GDPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low Gate Charge BVDSS 60VD2D1 Fast Switching Speed RDS(ON) 80mD1 PDIP-8 Package ID 3.9A RoHS CompliantG2S2PDIP-8G1S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ru
ap9973gp ap9973gs.pdf

AP9973GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AGSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DSTO-263(S)ruggedized device design, low o
ap9973gh-hf ap9973gj-hf.pdf

AP9973GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ME2301DN | 2SK4146-S19-AY | SSW47N60SFD | IRL2505 | IRLM210A | KF7N50I | FIR24N50APTG
History: ME2301DN | 2SK4146-S19-AY | SSW47N60SFD | IRL2505 | IRLM210A | KF7N50I | FIR24N50APTG



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