AP9973GP Todos los transistores

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AP9973GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9973GP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 27 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 77 pF

Resistencia drenaje-fuente RDS(on): 0.08 Ohm

Empaquetado / Estuche: TO-220

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AP9973GP Datasheet (PDF)

1.1. ap9973gp.pdf Size:62K _a-power

AP9973GP
AP9973GP

AP9973GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge BVDSS 60V D Ў Single Drive Requirement RDS(ON) 80m? Ў Surface Mount Package ID 14A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, low on-resis

3.1. ap9973gh.pdf Size:235K _a-power

AP9973GP
AP9973GP

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge D BVDSS 60V ▼ Simple Drive Requirement RDS(ON) 80mΩ ▼ Surface Mount Package ID 14A G ▼ RoHS Compliant & Halogen-Free S Description AP9973 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible

3.2. ap9973gm.pdf Size:62K _a-power

AP9973GP
AP9973GP

AP9973GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge BVDSS 60V D2 D2 Ў Single Drive Requirement RDS(ON) 80m? D1 D1 Ў Surface Mount Package ID 3.9A G2 Ў RoHS Compliant S2 G1 SO-8 S1 Description D2 The Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, rug

3.3. ap9973gj-hf.pdf Size:98K _a-power

AP9973GP
AP9973GP

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge D BVDSS 60V Ў Single Drive Requirement RDS(ON) 80m? Ў Surface Mount Package ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedi

3.4. ap9973gj.pdf Size:199K _a-power

AP9973GP
AP9973GP

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge D BVDSS 60V ▼ Simple Drive Requirement RDS(ON) 80mΩ ▼ Surface Mount Package ID 14A G ▼ RoHS Compliant & Halogen-Free S Description AP9973 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible

3.5. ap9973gh-hf.pdf Size:98K _a-power

AP9973GP
AP9973GP

AP9973GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge D BVDSS 60V Ў Single Drive Requirement RDS(ON) 80m? Ў Surface Mount Package ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedi

3.6. ap9973gs.pdf Size:62K _a-power

AP9973GP
AP9973GP

AP9973GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge BVDSS 60V D Ў Single Drive Requirement RDS(ON) 80m? Ў Surface Mount Package ID 14A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device design, low on-resis

3.7. ap9973gi.pdf Size:120K _a-power

AP9973GP
AP9973GP

AP9973GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Fast Switching Performance BVDSS 60V D Ў Single Drive Requirement RDS(ON) 80m? Ў Full Isolation Package ID 14A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

3.8. ap9973gd.pdf Size:60K _a-power

AP9973GP
AP9973GP

AP9973GD Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Ў Low Gate Charge BVDSS 60V D2 D1 Ў Fast Switching Speed RDS(ON) 80m? D1 Ў PDIP-8 Package ID 3.9A Ў RoHS Compliant G2 S2 PDIP-8 G1 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

Otros transistores... AP9972GP-HF , AP9972GR , AP9972GS-HF , AP9973GD , AP9973GH-HF , AP9973GI , AP9973GJ-HF , AP9973GM , 2SK1058 , AP9973GS , AP9974AGH-HF , AP9974AGP-HF , AP9974AGS-HF , AP9974BGP , AP9974GH-HF , AP9974GJ-HF , AP9974GP-HF .

 


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