AP9973GP
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9973GP
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 27
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 14
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 8
nC
trⓘ -
Время нарастания: 15
ns
Cossⓘ - Выходная емкость: 77
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08
Ohm
Тип корпуса:
TO-220
Аналог (замена) для AP9973GP
AP9973GP
Datasheet (PDF)
..1. Size:62K ape
ap9973gp ap9973gs.pdf 
AP9973GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AGSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DSTO-263(S)ruggedized device design, low o
7.1. Size:60K ape
ap9973gd.pdf 
AP9973GDPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low Gate Charge BVDSS 60VD2D1 Fast Switching Speed RDS(ON) 80mD1 PDIP-8 Package ID 3.9A RoHS CompliantG2S2PDIP-8G1S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ru
7.2. Size:98K ape
ap9973gh-hf ap9973gj-hf.pdf 
AP9973GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)
7.3. Size:235K ape
ap9973gh.pdf 
AP9973GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAP9973 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible
7.4. Size:199K ape
ap9973gj.pdf 
AP9973GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 80m Surface Mount Package ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAP9973 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible
7.5. Size:62K ape
ap9973gm.pdf 
AP9973GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD2D2 Single Drive Requirement RDS(ON) 80mD1D1 Surface Mount Package ID 3.9AG2 RoHS CompliantS2G1SO-8 S1DescriptionD2The Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switchi
7.6. Size:120K ape
ap9973gi.pdf 
AP9973GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 60VD Single Drive Requirement RDS(ON) 80m Full Isolation Package ID 14AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance
7.7. Size:822K cn vbsemi
ap9973gj.pdf 
AP9973GJwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secondar
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