AP9980GM Todos los transistores

 

AP9980GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9980GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SO-8
 

 Búsqueda de reemplazo de AP9980GM MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP9980GM Datasheet (PDF)

 ..1. Size:209K  ape
 ap9980gm.pdf pdf_icon

AP9980GM

AP9980GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD2D2 Single Drive Requirement RDS(ON) 52mD1D1 Surface Mount Package ID 4.6AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switching,ruggedized device d

 0.1. Size:97K  ape
 ap9980gm-hf.pdf pdf_icon

AP9980GM

AP9980GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 80VD2D2D1 Single Drive Requirement RDS(ON) 52mD1 Surface Mount Package ID 4.6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa

 7.1. Size:233K  ape
 ap9980gh-hf.pdf pdf_icon

AP9980GM

AP9980GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAP9980 series are from Advanced Power innovated design andGDSsilicon process technology to achieve the lowe

 7.2. Size:218K  ape
 ap9980gj.pdf pdf_icon

AP9980GM

AP9980GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AGSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switching,ruggedized device design, lo

MOSTRAR MÁS

Otros transistores... AP9977GJ-HF , AP9977GM , AP9978AGP-HF , AP9978GP , AP9979GH-HF , AP9979GJ , AP9980GH , AP9980GJ , AON6414A , AP9985GM , AP9987GH-HF , AP9987GJ-HF , AP9987GM , AP9990GH-HF , AP9990GIF-HF , AP9990GMT-HF , AP9990GP-HF .

History: CSD16401Q5 | CS1N80A1H | HTD160P04 | PMN40ENA | AP9980GJ | HTD200P03 | HTD1K5N10

 

 
Back to Top

 


 
.