AP9987GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9987GM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SO-8

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AP9987GM datasheet

 ..1. Size:208K  ape
 ap9987gm.pdf pdf_icon

AP9987GM

AP9987GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 90m D1 D1 Surface Mount Package ID 3.5A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d

 7.1. Size:198K  ape
 ap9987gj.pdf pdf_icon

AP9987GM

AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe

 7.2. Size:97K  ape
 ap9987gh-hf ap9987gj-hf.pdf pdf_icon

AP9987GM

AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe

 7.3. Size:97K  ape
 ap9987gh j-hf.pdf pdf_icon

AP9987GM

AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switchi

MOSTRAR MÁS

Otros transistores... AP9979GH-HF, AP9979GJ, AP9980GH, AP9980GJ, AP9980GM, AP9985GM, AP9987GH-HF, AP9987GJ-HF, 7N65, AP9990GH-HF, AP9990GIF-HF, AP9990GMT-HF, AP9990GP-HF, AP9990GR-HF, AP9992AGI-HF, AP9992AGP-HF, AP9992GI-HF