AP9987GM Todos los transistores

 

AP9987GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9987GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SO-8
 

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AP9987GM Datasheet (PDF)

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AP9987GM

AP9987GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD2D2 Single Drive Requirement RDS(ON) 90mD1D1 Surface Mount Package ID 3.5AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switching,ruggedized device d

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 ap9987gj.pdf pdf_icon

AP9987GM

AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe

 7.2. Size:97K  ape
 ap9987gh-hf ap9987gj-hf.pdf pdf_icon

AP9987GM

AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe

 7.3. Size:97K  ape
 ap9987gh j-hf.pdf pdf_icon

AP9987GM

AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switchi

MOSTRAR MÁS

Otros transistores... AP9979GH-HF , AP9979GJ , AP9980GH , AP9980GJ , AP9980GM , AP9985GM , AP9987GH-HF , AP9987GJ-HF , STP75NF75 , AP9990GH-HF , AP9990GIF-HF , AP9990GMT-HF , AP9990GP-HF , AP9990GR-HF , AP9992AGI-HF , AP9992AGP-HF , AP9992GI-HF .

History: SI7682DP | GP2M002A060XG

 

 
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