AP9992GI-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9992GI-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 84 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 115 nS

Cossⓘ - Capacitancia de salida: 930 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: TO-220CFM

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AP9992GI-HF datasheet

 ..1. Size:56K  ape
 ap9992gi-hf.pdf pdf_icon

AP9992GI-HF

AP9992GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 84A G RoHS Compliant & Halogen-Free S Description AP9992 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 7.1. Size:59K  ape
 ap9992gp-hf.pdf pdf_icon

AP9992GI-HF

AP9992GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the The Advanced Power MOSFETs from APEC provide the designer wit

 7.2. Size:132K  ape
 ap9992gr-hf.pdf pdf_icon

AP9992GI-HF

AP9992GR-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the The Advanced Power MOSFETs from APEC provide

 7.3. Size:55K  ape
 ap9992gp-a-hf.pdf pdf_icon

AP9992GI-HF

AP9992GP-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 2.99m Fast Switching Characteristic ID 180A G RoHS Compliant & Halogen-Free S Description AP9992 series are from Advanced Power innovated design and silicon process technology to achieve the low

MOSTRAR MÁS

Otros transistores... AP9987GM, AP9990GH-HF, AP9990GIF-HF, AP9990GMT-HF, AP9990GP-HF, AP9990GR-HF, AP9992AGI-HF, AP9992AGP-HF, IRF9540N, AP9992GP-A-HF, AP9992GP-HF, AP9992GR-HF, AP9995GH-HF, AP9995GJ-HF, AP9997AGH-HF, AP9997BGH-HF, AP9997BGJ-HF