Справочник MOSFET. AP9992GI-HF

 

AP9992GI-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9992GI-HF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 41.6 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 84 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 135 nC
   Время нарастания (tr): 115 ns
   Выходная емкость (Cd): 930 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm
   Тип корпуса: TO-220CFM

 Аналог (замена) для AP9992GI-HF

 

 

AP9992GI-HF Datasheet (PDF)

 ..1. Size:56K  ape
ap9992gi-hf.pdf

AP9992GI-HF AP9992GI-HF

AP9992GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 84AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 7.1. Size:59K  ape
ap9992gp-hf.pdf

AP9992GI-HF AP9992GI-HF

AP9992GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide thedesigner wit

 7.2. Size:132K  ape
ap9992gr-hf.pdf

AP9992GI-HF AP9992GI-HF

AP9992GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theThe Advanced Power MOSFETs from APEC provide

 7.3. Size:55K  ape
ap9992gp-a-hf.pdf

AP9992GI-HF AP9992GI-HF

AP9992GP-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 2.99m Fast Switching Characteristic ID 180AG RoHS Compliant & Halogen-FreeSDescriptionAP9992 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 7.4. Size:233K  ape
ap9992gr.pdf

AP9992GI-HF AP9992GI-HF

AP9992GR-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 165AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theThe Advanced Power MOSFETs from APEC provide

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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