AP9997GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9997GM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 95 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: SO-8

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AP9997GM datasheet

 ..1. Size:182K  ape
 ap9997gm.pdf pdf_icon

AP9997GM

AP9997GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95V D2 D2 Single Drive Requirement RDS(ON) 110m D1 D1 Surface Mount Package ID 3A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, rugge

 7.1. Size:97K  ape
 ap9997gh-hf ap9997gj-hf.pdf pdf_icon

AP9997GM

AP9997GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 100V Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 11A G RoHS Compliant & Halogen-Free S Description G D Advanced Power MOSFETs from APEC provide the S TO-252(H) designer with the best combination of fast

 7.2. Size:94K  ape
 ap9997gk-hf.pdf pdf_icon

AP9997GM

AP9997GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Lower Gate Charge RDS(ON) 120m S Fast Switching Characteristic ID 3.2A D Halogen Free & RoHS Compliant Product SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 7.3. Size:94K  ape
 ap9997gk.pdf pdf_icon

AP9997GM

AP9997GK RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 3.2A S D SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and co

MOSTRAR MÁS

Otros transistores... AP9995GH-HF, AP9995GJ-HF, AP9997AGH-HF, AP9997BGH-HF, AP9997BGJ-HF, AP9997GH-HF, AP9997GJ-HF, AP9997GK, 12N60, AP9997GP-HF, AP9998GH-HF, AP9998GS-HF, AP99T03GP-HF, AP99T03GS-HF, AP99T06AGI-HF, AP99T06AGP-HF, AP99T06GP-HF