AP9998GH-HF Todos los transistores

 

AP9998GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9998GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO-252

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AP9998GH-HF datasheet

 ..1. Size:59K  ape
 ap9998gh-hf.pdf pdf_icon

AP9998GH-HF

AP9998GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 44A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast sw

 7.1. Size:58K  ape
 ap9998gi-hf.pdf pdf_icon

AP9998GH-HF

AP9998GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 44A G RoHS Compliant & Halogen-Free S Description AP9998 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

 7.2. Size:59K  ape
 ap9998gs-hf.pdf pdf_icon

AP9998GH-HF

AP9998GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID 44A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 9.1. Size:54K  ape
 ap9995gh j-hf.pdf pdf_icon

AP9998GH-HF

AP9995GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Lower Gate Chage RDS(ON) 240m Fast Switching Characteristic ID 7A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the desi

MOSTRAR MÁS

Otros transistores... AP9997AGH-HF , AP9997BGH-HF , AP9997BGJ-HF , AP9997GH-HF , AP9997GJ-HF , AP9997GK , AP9997GM , AP9997GP-HF , IRF1010E , AP9998GS-HF , AP99T03GP-HF , AP99T03GS-HF , AP99T06AGI-HF , AP99T06AGP-HF , AP99T06GP-HF , AP9T15GH , AP9T15GJ .

History: WSD2012DN25 | WSD6056DN56

 

 

 

 

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