AP9T15GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9T15GH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 12.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 12.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TO-252

 Búsqueda de reemplazo de AP9T15GH MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP9T15GH datasheet

 ..1. Size:98K  ape
ap9t15gh ap9t15gj.pdf pdf_icon

AP9T15GH

AP9T15GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedi

 0.1. Size:98K  ape
ap9t15gh-hf ap9t15gj-hf.pdf pdf_icon

AP9T15GH

AP9T15GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast swi

 9.1. Size:98K  ape
ap9t18gh-hf.pdf pdf_icon

AP9T15GH

AP9T18GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38A G RoHS Compliant & Halogen-Free S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

 9.2. Size:126K  ape
ap9t18geh ap9t18gej.pdf pdf_icon

AP9T15GH

AP9T18GEH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D G-S Diode embedded BVDSS 20V G Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) rugg

Otros transistores... AP9997GP-HF, AP9998GH-HF, AP9998GS-HF, AP99T03GP-HF, AP99T03GS-HF, AP99T06AGI-HF, AP99T06AGP-HF, AP99T06GP-HF, STP80NF70, AP9T15GJ, AP9T16AGH-HF, AP9T16GH, AP9T16GJ, AP9T18GEH, AP9T18GEJ, AP9T18GH, AP9T18GJ