AP9T15GH Specs and Replacement

Type Designator: AP9T15GH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-252

AP9T15GH substitution

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AP9T15GH datasheet

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ap9t15gh ap9t15gj.pdf pdf_icon

AP9T15GH

AP9T15GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedi... See More ⇒

 0.1. Size:98K  ape
ap9t15gh-hf ap9t15gj-hf.pdf pdf_icon

AP9T15GH

AP9T15GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast swi... See More ⇒

 9.1. Size:98K  ape
ap9t18gh-hf.pdf pdf_icon

AP9T15GH

AP9T18GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38A G RoHS Compliant & Halogen-Free S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po... See More ⇒

 9.2. Size:126K  ape
ap9t18geh ap9t18gej.pdf pdf_icon

AP9T15GH

AP9T18GEH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D G-S Diode embedded BVDSS 20V G Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) rugg... See More ⇒

Detailed specifications: AP9997GP-HF, AP9998GH-HF, AP9998GS-HF, AP99T03GP-HF, AP99T03GS-HF, AP99T06AGI-HF, AP99T06AGP-HF, AP99T06GP-HF, STP80NF70, AP9T15GJ, AP9T16AGH-HF, AP9T16GH, AP9T16GJ, AP9T18GEH, AP9T18GEJ, AP9T18GH, AP9T18GJ

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