AP9T16AGH-HF Todos los transistores

 

AP9T16AGH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9T16AGH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 12.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 19.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO-252
 

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AP9T16AGH-HF datasheet

 ..1. Size:60K  ape
 ap9t16agh-hf.pdf pdf_icon

AP9T16AGH-HF

AP9T16AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fas

 5.1. Size:186K  ape
 ap9t16agh.pdf pdf_icon

AP9T16AGH-HF

AP9T16AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5A G RoHS Compliant & Halogen-Free S Description G AP9T16A series are from Advanced Power inn

 8.1. Size:262K  ape
 ap9t16gh ap9t16gj.pdf pdf_icon

AP9T16AGH-HF

AP9T16GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 25m Single Drive Requirement ID 25A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, TO-252(H) S ruggedized device design, ultr

 9.1. Size:98K  ape
 ap9t18gh-hf.pdf pdf_icon

AP9T16AGH-HF

AP9T18GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38A G RoHS Compliant & Halogen-Free S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

MOSTRAR MÁS

Otros transistores... AP9998GS-HF , AP99T03GP-HF , AP99T03GS-HF , AP99T06AGI-HF , AP99T06AGP-HF , AP99T06GP-HF , AP9T15GH , AP9T15GJ , TK10A60D , AP9T16GH , AP9T16GJ , AP9T18GEH , AP9T18GEJ , AP9T18GH , AP9T18GJ , AP9T19GJ , APA2N70K-HF .

History: 2SK3102-01R | 2SK3114 | 2SK1065 | 2SK2043LS

 

 

 


 
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