All MOSFET. AP9T16AGH-HF Datasheet

 

AP9T16AGH-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP9T16AGH-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 19.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252

 AP9T16AGH-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP9T16AGH-HF Datasheet (PDF)

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 ap9t16agh-hf.pdf

AP9T16AGH-HF AP9T16AGH-HF

AP9T16AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fas

 5.1. Size:186K  ape
 ap9t16agh.pdf

AP9T16AGH-HF AP9T16AGH-HF

AP9T16AGH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5AG RoHS Compliant & Halogen-FreeSDescriptionGAP9T16A series are from Advanced Power inn

 8.1. Size:262K  ape
 ap9t16gh ap9t16gj.pdf

AP9T16AGH-HF AP9T16AGH-HF

AP9T16GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 25m Single Drive Requirement ID 25AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching, TO-252(H)Sruggedized device design, ultr

 9.1. Size:98K  ape
 ap9t18gh-hf.pdf

AP9T16AGH-HF AP9T16AGH-HF

AP9T18GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38AG RoHS Compliant & Halogen-FreeSDescriptionAP9T18 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest po

 9.2. Size:126K  ape
 ap9t18geh ap9t18gej.pdf

AP9T16AGH-HF AP9T16AGH-HF

AP9T18GEH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD G-S Diode embedded BVDSS 20VG Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant SDescriptionThe Advanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast switching,TO-252(H)rugg

 9.3. Size:212K  ape
 ap9t18gh ap9t18gj.pdf

AP9T16AGH-HF AP9T16AGH-HF

AP9T18GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 38AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device design, ultra

 9.4. Size:98K  ape
 ap9t15gh ap9t15gj.pdf

AP9T16AGH-HF AP9T16AGH-HF

AP9T15GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedi

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 ap9t19gj.pdf

AP9T16AGH-HF AP9T16AGH-HF

AP9T19GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS 12V DCapable of 2.5V gate drive RDS(ON) 16m Single Drive Requirement ID 33A GSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combinat

 9.6. Size:98K  ape
 ap9t15gh-hf ap9t15gj-hf.pdf

AP9T16AGH-HF AP9T16AGH-HF

AP9T15GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast swi

Datasheet: AP9998GS-HF , AP99T03GP-HF , AP99T03GS-HF , AP99T06AGI-HF , AP99T06AGP-HF , AP99T06GP-HF , AP9T15GH , AP9T15GJ , HY1906P , AP9T16GH , AP9T16GJ , AP9T18GEH , AP9T18GEJ , AP9T18GH , AP9T18GJ , AP9T19GJ , APA2N70K-HF .

 

 
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