AP9T16GJ Datasheet. Equivalente

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 ap9t16gh ap9t16gj.pdf

AP9T16GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 25m Single Drive Requirement ID 25A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, TO-252(H) S ruggedized device design, ultr

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 ap9t16agh-hf.pdf

AP9T16AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fas

 8.2. Size:186K  ape
 ap9t16agh.pdf

AP9T16AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 20m Fast Switching Characteristic ID 19.5A G RoHS Compliant & Halogen-Free S Description G AP9T16A series are from Advanced Power inn

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 ap9t18gh-hf.pdf

AP9T18GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 14m Fast Switching Characteristic ID 38A G RoHS Compliant & Halogen-Free S Description AP9T18 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

 9.2. Size:126K  ape
 ap9t18geh ap9t18gej.pdf

AP9T18GEH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D G-S Diode embedded BVDSS 20V G Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 40A RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) rugg

 9.3. Size:212K  ape
 ap9t18gh ap9t18gj.pdf

AP9T18GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 14m Surface mount package ID 38A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedized device design, ultra

 9.4. Size:98K  ape
 ap9t15gh ap9t15gj.pdf

AP9T15GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedi

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 ap9t19gj.pdf

AP9T19GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 12V D Capable of 2.5V gate drive RDS(ON) 16m Single Drive Requirement ID 33A G S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combinat

 9.6. Size:98K  ape
 ap9t15gh-hf ap9t15gj-hf.pdf

AP9T15GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 20V D Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 12.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast swi