2SJ670 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ670
Código: NA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.5 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 1.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1.2 V
Carga de la puerta (Qg): 11 nC
Tiempo de subida (tr): 4.5 nS
Conductancia de drenaje-sustrato (Cd): 43 pF
Resistencia entre drenaje y fuente RDS(on): 0.41 Ohm
Paquete / Cubierta: PCP
Búsqueda de reemplazo de MOSFET 2SJ670
2SJ670 Datasheet (PDF)
2sj670.pdf
Ordering number : EN8354A 2SJ670SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ670ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-to-Source Voltage VGSS 20
2sj676.pdf
2SJ676 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ676 Switching Regulator, DC/DC Converter and Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -200 V) Enhancement mode: Vth = -1.5 to -3.5 V
2sj673.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj673.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ673SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ673 Isolated TO-220 (MP-45F) FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -
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