2SJ670 Todos los transistores

Ordering number EN8354A 2SJ670 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ670 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage VGSS 20

2SJ676 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( -MOS V) 2SJ676 Switching Regulator, DC/DC Converter and Unit mm Motor Drive Applications Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 2.0 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -200 V) Enhancement mode Vth = -1.5 to -3.5 V

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ673 Isolated TO-220 (MP-45F) FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -