Ordering number : EN8354A 2SJ670SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ670ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-to-Source Voltage VGSS 20

2SJ676 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ676 Switching Regulator, DC/DC Converter and Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -200 V) Enhancement mode: Vth = -1.5 to -3.5 V

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ673SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ673 Isolated TO-220 (MP-45F) FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -