2SJ598-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ598-Z
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 23 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 150 pF
Resistencia drenaje-fuente RDS(on): 0.102 Ohm
Empaquetado / Estuche: TO-252
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2SJ598-Z Datasheet (PDF)
1.1. 2sj598-z.pdf 
Size:1671K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ598-Z TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● VDS (V) =-60V ● ID =-12 A 0.127 ● RDS(ON) ＜ 130m Ω (VGS =-10V) +0.1 0.80-0.1 max ● RDS(ON) ＜ 190mΩ (VGS =-4V) ● Low Ciss: Ciss = 720 pF (TYP.) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain Drain 3 Source Bod
4.1. 2sj598.pdf Size:153K _nec
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ598 TO-251 (MP-3) 2SJ598-Z TO-252 (MP-3Z) FEATURES Low on-state resistance: RDS(on)1 = 130 m? MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 190 m?
5.1. 2sj595.pdf Size:30K _sanyo
Ordering number : ENN6978 2SJ595 P-Channel Silicon MOSFET 2SJ595 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ595] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ595] 6.5 2.3 5.0 0.5
5.2. 2sj590.pdf Size:33K _sanyo
Ordering number : ENN7149 2SJ590LS P-Channel Silicon MOSFET 2SJ590LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C [2SJ590LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25C SANYO : TO-220FI(LS) Parameter Symbol Conditions Ratin
5.3. 2sj590ls.pdf Size:33K _sanyo
Ordering number : ENN7149 2SJ590LS P-Channel Silicon MOSFET 2SJ590LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C [2SJ590LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25C SANYO : TO-220FI(LS) Parameter Symbol Conditions Ratin
5.4. 2sj597.pdf Size:30K _sanyo
Ordering number : ENN6670 2SJ597 P-Channel Silicon MOSFET 2SJ597 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ597] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ597] 6.5 2.3 5.0 0.5 4 0.5 0
5.5. 2sj596.pdf Size:29K _sanyo
Ordering number : ENN6979 2SJ596 P-Channel Silicon MOSFET 2SJ596 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ596] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ596] 6.5 2.3 5.0 0.5
5.6. 2sj594.pdf Size:31K _sanyo
Ordering number : ENN6977 2SJ594 P-Channel Silicon MOSFET 2SJ594 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ594] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ594] 6.5 2.3 5.0 0.5
5.7. 2sj591ls.pdf Size:32K _sanyo
Ordering number : ENN7150 2SJ591LS P-Channel Silicon MOSFET 2SJ591LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C [2SJ591LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25C SANYO : TO-220FI(LS) Parameter Symbol Conditions Ratin
5.8. 2sj599.pdf Size:40K _nec
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ599 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ599 TO-251 2SJ599-Z TO-252 FEATURES Low on-state resistance: RDS(on)1 = 75 m? MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 =
5.9. 2sj599.pdf Size:121K _tysemi
SMD Type SMD Type SMD Type SMD Type Product specification 2SJ599 Features TO-252 Low on-resistance Unit: mm +0.15 +0.1 6.50-0.15 2.30-0.1 RDS(on)1 =75m MAX. (VGS =-10 V, ID =-10A) 5.30+0.2 0.50+0.8 -0.2 -0.7 RDS(on)2 = 110 m MAX. (VGS =-4.0V, ID =-10 A) Low Ciss: Ciss = 1300 pF TYP. Built-in gate protection diode 0.127 0.80+0.1 max -0.1 1Gate +0.1 2.3 0.60-0.1 2Drain 4.6
5.10. 2sj599-z.pdf Size:951K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ599-Z TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● VDS (V) =-60V ● ID =-20A 0.127 ● RDS(ON) ＜ 75m Ω (VGS =-10V) +0.1 0.80-0.1 max ● RDS(ON) ＜ 111mΩ (VGS =-4V) ● Low Ciss: Ciss = 1300 pF (TYP.) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source Drain Body
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