2SJ598-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type MOSFET P-Channel MOSFET 2SJ598-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features VDS (V) =-60V ID =-12 A 0.127 RDS(ON) 130m (VGS =-10V) +0.1 0.80-0.1 max RDS(ON) 190m (VGS =-4V) Low Ciss Ciss = 720 pF (TYP.) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain Drain 3 Source Bod

2SJ598-Z-E1 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ598 TO-251 (MP-3) 2SJ598-Z TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A) RDS(on

isc P-Channel MOSFET Transistor 2SJ598 FEATURES Static drain-source on-resistance RDS(on) 130m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Built in gate protection diode ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -60 V DSS V