2SJ598-Z - аналоги, даташиты, параметры транзистора

2SJ598-Z Datasheet (PDF)

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SMD Type MOSFETP-Channel MOSFET2SJ598-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features VDS (V) =-60V ID =-12 A0.127 RDS(ON) 130m (VGS =-10V)+0.10.80-0.1max RDS(ON) 190m (VGS =-4V) Low Ciss: Ciss = 720 pF (TYP.)+ 0.12.3 0.60- 0.11 Gate+0.154 .60 -0.152 DrainDrain 3 SourceBod

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2SJ598-Z-E1www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ598SWITCHING P-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ598 TO-251 (MP-3)2SJ598-Z TO-252 (MP-3Z)FEATURES Low on-state resistance: RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A) RDS(on

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isc P-Channel MOSFET Transistor 2SJ598FEATURESStatic drain-source on-resistance:RDS(on)130mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBuilt in gate protection diodeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -60 VDSSV

Другие MOSFET... 2SK2219 , 2SK3850 , 2SK2857 , 2SJ306 , 2SJ72 , 2SJ670 , 2SJ164 , 2SJ598 , STP65NF06 , 2SJ557 , 2SK3876-01R , 2SK3025 , 2SK1217-01R , 2SK1375 , 2SK1904 , 2SK2352 , 2SK2655-01R .