2SK3430-Z Todos los transistores

isc N-Channel MOSFET Transistor 2SK3430-Z FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

SMD Type MOSFET N-Channel MOSFET 2SK3430-ZJ Features VDS S = 40V ID = 80 A (VGS = 10V) RDS(ON) 7.3m (VGS = 10V) RDS(ON) 15m (VGS = 4V) Low Ciss Ciss = 2800 pF TYP. Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage

isc N-Channel MOSFET Transistor 2SK3430-S FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3430 TO-220AB 2SK3430-S TO-262 FEATURES 2SK3430-Z TO-220SMD Super low on-state resistance RDS(on)1 = 7.3 m

isc N-Channel MOSFET Transistor 2SK3430 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi