2SK3430-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3430-Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 84 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 50 nC
   trⓘ - Tiempo de subida: 1800 nS
   Cossⓘ - Capacitancia de salida: 730 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
   Paquete / Cubierta: TO-220SMD

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2SK3430-Z Datasheet (PDF)

..1. Size:222K inchange semiconductor
2sk3430-z.pdf

isc N-Channel MOSFET Transistor 2SK3430-ZFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

0.1. Size:995K kexin
2sk3430-zj.pdf

SMD Type MOSFETN-Channel MOSFET2SK3430-ZJ Features VDS S = 40V ID = 80 A (VGS = 10V) RDS(ON) 7.3m (VGS = 10V) RDS(ON) 15m (VGS = 4V) Low Ciss: Ciss = 2800 pF TYP.DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-Source Voltage

6.1. Size:282K inchange semiconductor
2sk3430-s.pdf

isc N-Channel MOSFET Transistor 2SK3430-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

7.1. Size:48K nec
2sk3430.pdf

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3430SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3430 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3430 TO-220AB2SK3430-S TO-262FEATURES2SK3430-Z TO-220SMD Super low on-state resistance:RDS(on)1 = 7.3 m

7.2. Size:288K inchange semiconductor
2sk3430.pdf

isc N-Channel MOSFET Transistor 2SK3430FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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