All MOSFET. 2SK3430-Z Datasheet

 

2SK3430-Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3430-Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 1800 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: TO-220SMD

 2SK3430-Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3430-Z Datasheet (PDF)

 ..1. Size:222K  inchange semiconductor
 2sk3430-z.pdf

2SK3430-Z 2SK3430-Z

isc N-Channel MOSFET Transistor 2SK3430-ZFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 0.1. Size:995K  kexin
 2sk3430-zj.pdf

2SK3430-Z 2SK3430-Z

SMD Type MOSFETN-Channel MOSFET2SK3430-ZJ Features VDS S = 40V ID = 80 A (VGS = 10V) RDS(ON) 7.3m (VGS = 10V) RDS(ON) 15m (VGS = 4V) Low Ciss: Ciss = 2800 pF TYP.DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-Source Voltage

 6.1. Size:282K  inchange semiconductor
 2sk3430-s.pdf

2SK3430-Z 2SK3430-Z

isc N-Channel MOSFET Transistor 2SK3430-SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 7.1. Size:48K  nec
 2sk3430.pdf

2SK3430-Z 2SK3430-Z

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3430SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3430 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3430 TO-220AB2SK3430-S TO-262FEATURES2SK3430-Z TO-220SMD Super low on-state resistance:RDS(on)1 = 7.3 m

 7.2. Size:288K  inchange semiconductor
 2sk3430.pdf

2SK3430-Z 2SK3430-Z

isc N-Channel MOSFET Transistor 2SK3430FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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