3SK199 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3SK199

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 13.5 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.03 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: 2-3J1A

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3SK199 datasheet

 ..1. Size:181K  toshiba
 3sk199.pdf pdf_icon

3SK199

3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance. Low reverse transfer capacitance C = 0.015 pF (typ.) rss Low noise figure NF = 1.9dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 13

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 3sk192p 3sk192q.pdf pdf_icon

3SK199

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

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 3sk171 3sk179 3sk182 3sk193.pdf pdf_icon

3SK199

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 3sk194.pdf pdf_icon

3SK199

3SK194 Silicon N-Channel Dual Gate MOS FET Application VHF/UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 1. Source 4 2. Gate1 3. Gate2 4. Drain 3SK194 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 15 V Gate 1 to source voltage VG1S 10 V Gate 2 to source voltage VG2S 10 V Drain current ID 35 mA Channel power dissipation Pc

MOSTRAR MÁS

Otros transistores... 2SK3523-01R, 2SK3525-01MR, 2SK3637, 2SK4096LS, BUZ334, 3N161, 3N165, 3N166, IRF640N, 3SK207, 3SK225, 3SK226, 3SK232, 3SK249, 3SK256, 3SK257, 3SK258