3SK199 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3SK199
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 13.5 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: 2-3J1A
Búsqueda de reemplazo de 3SK199 MOSFET
3SK199 Datasheet (PDF)
3sk199.pdf

3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C = 0.015 pF (typ.) rss Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 13
3sk192p 3sk192q.pdf

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
3sk194.pdf

3SK194Silicon N-Channel Dual Gate MOS FETApplicationVHF/UHF TV tuner RF amplifierOutlineMPAK-42311. Source42. Gate13. Gate24. Drain3SK194Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 15 VGate 1 to source voltage VG1S 10 VGate 2 to source voltage VG2S 10 VDrain current ID 35 mAChannel power dissipation Pc
Otros transistores... 2SK3523-01R , 2SK3525-01MR , 2SK3637 , 2SK4096LS , BUZ334 , 3N161 , 3N165 , 3N166 , IRF630 , 3SK207 , 3SK225 , 3SK226 , 3SK232 , 3SK249 , 3SK256 , 3SK257 , 3SK258 .
History: HY3N80T
History: HY3N80T



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