3SK199 Specs and Replacement

Type Designator: 3SK199

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 13.5 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

Package: 2-3J1A

3SK199 substitution

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3SK199 datasheet

 ..1. Size:181K  toshiba
 3sk199.pdf pdf_icon

3SK199

3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance. Low reverse transfer capacitance C = 0.015 pF (typ.) rss Low noise figure NF = 1.9dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 13... See More ⇒

 9.1. Size:599K  1
 3sk192p 3sk192q.pdf pdf_icon

3SK199

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten... See More ⇒

 9.2. Size:181K  1
 3sk171 3sk179 3sk182 3sk193.pdf pdf_icon

3SK199

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 9.3. Size:41K  1
 3sk194.pdf pdf_icon

3SK199

3SK194 Silicon N-Channel Dual Gate MOS FET Application VHF/UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 1. Source 4 2. Gate1 3. Gate2 4. Drain 3SK194 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 15 V Gate 1 to source voltage VG1S 10 V Gate 2 to source voltage VG2S 10 V Drain current ID 35 mA Channel power dissipation Pc... See More ⇒

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Detailed specifications: 2SK3523-01R, 2SK3525-01MR, 2SK3637, 2SK4096LS, BUZ334, 3N161, 3N165, 3N166, IRF640N, 3SK207, 3SK225, 3SK226, 3SK232, 3SK249, 3SK256, 3SK257, 3SK258

Keywords - 3SK199 MOSFET specs

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