2N3820 Todos los transistores

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2N3820 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3820

Tipo de FET: JFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.015 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: TO-92

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2N3820 Datasheet (PDF)

1.1. 2n3820.pdf Size:26K _fairchild_semi

2N3820
2N3820

2N3820 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage -20 V VGS Gate-S

5.1. 2n3821 2n3822 2n3824.pdf Size:88K _central

2N3820
2N3820

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.2. 2n3828.pdf Size:77K _secos

2N3820

2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? General Purpose Amplifier Transistor TO-92 G H ? Emitter ? Base ? Collector J A D Collector B Millimeter REF. ?? Min. Max. A 4.40 4.70 K B 4.30 4.70 C 12.70 - ?? D 3.30 3.81 E 0.36 0.56 E C F Ba

5.3. 2n3821 2n3822.pdf Size:94K _interfet

2N3820

Databook.fxp 1/13/99 2:09 PM Page B-3 01/99 B-3 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 50 V ? Small Signal Amplifiers Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2mW/C At 25C free air temperature: 2N382

5.4. 2n3821 2n3822 2n3823.pdf Size:54K _microsemi

2N3820
2N3820

TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DS Drain-Gate Voltage V 50 30 V DG Gate Current I 10 mA GF TO-72* Power Dissipation T

Otros transistores... 2N2608 , 2N2609 , 2N3684 , 2N3685 , 2N3686 , 2N3687 , 2N3796 , 2N3797 , IRFP4332 , 2N3821 , 2N3822 , 2N3823 , 2N3921 , 2N3922 , 2N3954 , 2N3955 , 2N3956 .

 


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