2N3820 Datasheet and Replacement
Type Designator: 2N3820
Type of Transistor: JFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.015 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Package: TO-92
2N3820 substitution
2N3820 Datasheet (PDF)
2n3820.pdf

2N3820P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage -20 VVG
2n3821 2n3822 2n3824.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3828.pdf

2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Amplifier TransistorTO-92 G H Emitter Base CollectorJA DCollectorBMillimeterREF. Min. Max.A 4.40 4.70KB 4.30 4.70 C 12.70 - D 3.30 3.81E 0
2n3821 2n3822.pdf

Databook.fxp 1/13/99 2:09 PM Page B-301/99 B-32N3821, 2N3822N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C VHF AmplifiersReverse Gate Source & Reverse Gate Drain Voltage 50 V Small Signal AmplifiersContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mWPower Derating 2mW/CAt 25C free air temperat
Datasheet: 2N2608 , 2N2609 , 2N3684 , 2N3685 , 2N3686 , 2N3687 , 2N3796 , 2N3797 , 2SK3568 , 2N3821 , 2N3822 , 2N3823 , 2N3921 , 2N3922 , 2N3954 , 2N3955 , 2N3956 .
Keywords - 2N3820 MOSFET datasheet
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