2N3823 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3823
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 7.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.01 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Búsqueda de reemplazo de 2N3823 MOSFET
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2N3823 datasheet
2n3821 2n3822 2n3823.pdf
TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DS Drain-Gate Voltage V 50 30 V DG Gate Current I 10 mA GF TO-72* Power Dissipatio
2n3820.pdf
2N3820 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage -20 V VG
2n3821 2n3822 2n3824.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n3828.pdf
2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Amplifier Transistor TO-92 G H Emitter Base Collector J A D Collector B Millimeter REF. Min. Max. A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0
Otros transistores... 2N3685, 2N3686, 2N3687, 2N3796, 2N3797, 2N3820, 2N3821, 2N3822, K4145, 2N3921, 2N3922, 2N3954, 2N3955, 2N3956, 2N5018, 2N5019, 2N3957
History: BFC15 | APT5017SVR
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