2N3823 Todos los transistores

 

2N3823 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N3823
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 0.3 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 7.5 V
   Corriente continua de drenaje |Id|: 0.01 A
   Temperatura máxima de unión (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 4 V
   Paquete / Cubierta: TO-72 TO-206AF

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2N3823 Datasheet (PDF)

 ..1. Size:54K  microsemi
2n3821 2n3822 2n3823.pdf

2N3823 2N3823

TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DSDrain-Gate Voltage V 50 30 V DGGate Current I 10 mA GF TO-72* Power Dissipatio

 9.1. Size:26K  fairchild semi
2n3820.pdf

2N3823 2N3823

2N3820P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from process 89.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage -20 VVG

 9.2. Size:88K  central
2n3821 2n3822 2n3824.pdf

2N3823 2N3823

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.3. Size:77K  secos
2n3828.pdf

2N3823

2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Amplifier TransistorTO-92 G H Emitter Base CollectorJA DCollectorBMillimeterREF. Min. Max.A 4.40 4.70KB 4.30 4.70 C 12.70 - D 3.30 3.81E 0

 9.4. Size:94K  interfet
2n3821 2n3822.pdf

2N3823

Databook.fxp 1/13/99 2:09 PM Page B-301/99 B-32N3821, 2N3822N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C VHF AmplifiersReverse Gate Source & Reverse Gate Drain Voltage 50 V Small Signal AmplifiersContinuous Forward Gate Current 10 mAContinuous Device Power Dissipation 300 mWPower Derating 2mW/CAt 25C free air temperat

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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