2N3957 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N3957
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 4 V
   |Id|ⓘ - Corriente continua de drenaje: 0.05 A

CARACTERÍSTICAS ELÉCTRICAS

Paquete / Cubierta: TO-71

Búsqueda de reemplazo de MOSFET 2N3957

2N3957 Datasheet (PDF)

..1. Size:66K interfet
2n3957 2n3958.pdf

Databook.fxp 1/14/99 11:30 AM Page B-6B-6 01/992N3957, 2N3958N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Temperature

9.1. Size:260K rca
2n395.pdf

9.2. Size:55K vishay
2n3958.pdf

2N3958Vishay SiliconixMonolithic N-Channel JFET DualPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV)1.0 to 4.5 50 1 50 25FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed,Accuracy Temp-

9.3. Size:67K interfet
2n3954 2n3955 2n3956.pdf

Databook.fxp 1/14/99 11:29 AM Page B-501/99 B-52N3954, 2N3955, 2N3956N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Tem

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

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