2N3957 - Даташиты. Аналоги. Основные параметры
Наименование производителя: 2N3957
Тип транзистора: JFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 4 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.05 A
Тип корпуса: TO-71
Аналог (замена) для 2N3957
2N3957 Datasheet (PDF)
2n3957 2n3958.pdf
Databook.fxp 1/14/99 11:30 AM Page B-6B-6 01/992N3957, 2N3958N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Temperature
2n3958.pdf
2N3958Vishay SiliconixMonolithic N-Channel JFET DualPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV)1.0 to 4.5 50 1 50 25FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Differential Match vs. Current D Wideband Differential AmpsD High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed,Accuracy Temp-
2n3954 2n3955 2n3956.pdf
Databook.fxp 1/14/99 11:29 AM Page B-501/99 B-52N3954, 2N3955, 2N3956N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Tem
Другие MOSFET... 2N3823 , 2N3921 , 2N3922 , 2N3954 , 2N3955 , 2N3956 , 2N5018 , 2N5019 , IRF530 , 2N3958 , 2N3993 , 2N3993A , 2N3994 , 2N3994A , 2N4091 , 2N4092 , 2N4093 .
History: AP95T10GW-HF | RJK0631JPR | BUK9M24-40E | HM3205 | SQD19P06-60L | NP84N04DHE
History: AP95T10GW-HF | RJK0631JPR | BUK9M24-40E | HM3205 | SQD19P06-60L | NP84N04DHE
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