2N3958 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3958

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 4 V

|Id|ⓘ - Corriente continua de drenaje: 0.05 A

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: TO-71

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2N3958 datasheet

 ..1. Size:55K  vishay
2n3958.pdf pdf_icon

2N3958

2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 1.0 to 4.5 50 1 50 25 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Accuracy Temp-

 ..2. Size:66K  interfet
2n3957 2n3958.pdf pdf_icon

2N3958

Databook.fxp 1/14/99 11 30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85 C Case Temperature

 9.1. Size:260K  rca
2n395.pdf pdf_icon

2N3958

 9.2. Size:67K  interfet
2n3954 2n3955 2n3956.pdf pdf_icon

2N3958

Databook.fxp 1/14/99 11 29 AM Page B-5 01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85 C Case Tem

Otros transistores... 2N3921, 2N3922, 2N3954, 2N3955, 2N3956, 2N5018, 2N5019, 2N3957, CS150N03A8, 2N3993, 2N3993A, 2N3994, 2N3994A, 2N4091, 2N4092, 2N4093, 2N4117