All MOSFET. 2N3958 Datasheet

 

2N3958 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N3958

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.25 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 4 V

Maximum Drain Current |Id|: 0.05 A

Package: TO-71

2N3958 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N3958 Datasheet (PDF)

1.1. 2n3958.pdf Size:55K _vishay

2N3958
2N3958

2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 1.0 to 4.5 50 1 50 25 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Accuracy Temp-Compensated,

1.2. 2n3957 2n3958.pdf Size:66K _interfet

2N3958

Databook.fxp 1/14/99 11:30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA ? High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85C Case Temperature (both si

 5.1. 2n395.pdf Size:260K _rca

2N3958

5.2. 2n3954 2n3955 2n3956.pdf Size:67K _interfet

2N3958

Databook.fxp 1/14/99 11:29 AM Page B-5 01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA ? High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85C Case Temperature

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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