2N3958 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N3958
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.25 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 4 V
Maximum Drain Current |Id|: 0.05 A
Package: TO-71
2N3958 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N3958 Datasheet (PDF)
1.1. 2n3958.pdf 
Size:55K _vishay
2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 1.0 to 4.5 50 1 50 25 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Accuracy Temp-Compensated,
1.2. 2n3957 2n3958.pdf Size:66K _interfet
Databook.fxp 1/14/99 11:30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA ? High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85C Case Temperature (both si
5.1. 2n395.pdf Size:260K _rca
5.2. 2n3954 2n3955 2n3956.pdf Size:67K _interfet
Databook.fxp 1/14/99 11:29 AM Page B-5 01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA ? High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85C Case Temperature
Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
