2N5116 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5116
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.025 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 150 Ohm
Paquete / Cubierta: TO-18
Búsqueda de reemplazo de MOSFET 2N5116
Principales características: 2N5116
2n5114 2n5115 2n5116.pdf
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2n5114 2n5115 2n5116.pdf
P-Channel JFET Switch CORPORATION 2N5114 2N5116 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V signals can be handled using only +5V logic (TTL or CMOS). G
mx2n5114 mx2n5115 mx2n5116.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test C
2n5114ub 2n5114ube3 2n5115ub 2n5115ube3 2n5116ub 2n5116ube3.pdf
2N5114UB thru 2N5116UB Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important For t
Otros transistores... 2N4869 , 2N4867A , 2N4868A , 2N4869A , 2N5020 , 2N5021 , 2N5114 , 2N5115 , IRF640 , 2N5196 , 2N5197 , 2N5198 , 2N5199 , 2N5245 , 2N5246 , 2N5397 , 2N5398 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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