All MOSFET. 2N5116 Datasheet

 

2N5116 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5116

Type of Transistor: JFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 0.025 A

Maximum Junction Temperature (Tj): 200 °C

Rise Time (tr): 30 nS

Maximum Drain-Source On-State Resistance (Rds): 150 Ohm

Package: TO-18

2N5116 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N5116 Datasheet (PDF)

1.1. 2n5114 2n5115 2n5116.pdf Size:85K _central

2N5116

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.2. 2n5114 2n5115 2n5116.pdf Size:33K _calogic

2N5116
2N5116

P-Channel JFET Switch CORPORATION 2N5114 2N5116 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V signals can be handled using only +5V logic (TTL or CMOS). Gate Cu

 5.1. 2n5117 2n5118 2n5119.pdf Size:64K _intersil

2N5116
2N5116

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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