2N5246 Todos los transistores

 

2N5246 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5246
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 4 V
   |Id|ⓘ - Corriente continua de drenaje: 0.007 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.5 V
   Paquete / Cubierta: TO-92
     - Selección de transistores por parámetros

 

2N5246 Datasheet (PDF)

 ..1. Size:26K  fairchild semi
2n5246.pdf pdf_icon

2N5246

2N5246N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So

 9.1. Size:26K  fairchild semi
2n5245.pdf pdf_icon

2N5246

2N5245N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So

 9.2. Size:39K  jmnic
2n5241.pdf pdf_icon

2N5246

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25) SYMBOL PA

 9.3. Size:43K  microelectronics
2n5249.pdf pdf_icon

2N5246

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