2N5246 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5246
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 4 V
|Id|ⓘ - Corriente continua de drenaje: 0.007 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Encapsulados: TO-92
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2N5246 datasheet
2n5246.pdf
2N5246 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So
2n5245.pdf
2N5245 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So
2n5241.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL PA
Otros transistores... 2N5114, 2N5115, 2N5116, 2N5196, 2N5197, 2N5198, 2N5199, 2N5245, AO3400, 2N5397, 2N5398, 2N5432, 2N5433, 2N5434, 2N5452, 2N5453, 2N5454
History: MTN8N65E3 | 12N06Z
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