2N5246 Datasheet and Replacement
Type Designator: 2N5246
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 0.007 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Package: TO-92
2N5246 substitution
2N5246 Datasheet (PDF)
2n5246.pdf

2N5246N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So
2n5245.pdf

2N5245N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So
2n5241.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25) SYMBOL PA
Datasheet: 2N5114 , 2N5115 , 2N5116 , 2N5196 , 2N5197 , 2N5198 , 2N5199 , 2N5245 , IRF3710 , 2N5397 , 2N5398 , 2N5432 , 2N5433 , 2N5434 , 2N5452 , 2N5453 , 2N5454 .
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MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
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