2N5246 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N5246
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.35 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 4 V
Maximum Drain Current |Id|: 0.007 A
Maximum Junction Temperature (Tj): 150 °C
Package: TO-92
2N5246 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N5246 Datasheet (PDF)
1.1. 2n5246.pdf 
Size:26K _fairchild_semi
2N5246 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Vol
5.1. 2n5245.pdf Size:26K _fairchild_semi
2N5245 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Vol
5.2. 2n5241.pdf Size:39K _jmnic
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25?) SYMBOL PARAMET
5.3. 2n5249.pdf Size:43K _microelectronics
5.4. 2n5240.pdf Size:39K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5240 DESCRIPTION ·High Voltage: VCEO(SUS)= 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCER(SU
5.5. 2n5241.pdf Size:116K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5241 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ Switching regulator Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION MAXIMUN RATINGS(Ta=25Ўж
5.6. 2n5240.pdf Size:168K _aeroflex
NPN Power Silicon Transistor 2N5240 Features • High Voltage: Vceo(sus) = 300 V (min) • Wide Area of Safe Operation • Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. • TO-3 (TO-204AA) Package Maximum Ratings (TA = 25 °C) Ratings Symbol Value Units Collector - Base Voltage VCBO
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
