2N5458 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N5458
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 3.5 V
   |Id|ⓘ - Corriente continua de drenaje: 0.009 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.5 V
Paquete / Cubierta: TO-92

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2N5458 Datasheet (PDF)

..1. Size:129K fairchild semi
2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf

2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

..2. Size:59K central
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

..3. Size:138K onsemi
2n5457 2n5458.pdf

2N5457, 2N5458JFETs - General PurposeN-Channel - DepletionN-Channel Junction Field Effect Transistors, depletion mode(Type A) designed for audio and switching applications.http://onsemi.comFeatures1 DRAIN N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance3 High DC Input Resistance GATE Low Transfer and Input Capacitance

9.1. Size:110K motorola
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5457/DJFETs General Purpose2N5457NChannel Depletion1 DRAIN*Motorola Preferred Device3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit123DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcCASE 2904, STYLE 5Reverse GateSource Voltage VGSR 25 VdcTO92 (TO226AA)

9.2. Size:65K intersil
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