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2N5458 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5458

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.625 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 3.5 V

Corriente continua de drenaje (Id): 0.009 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: TO-92

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2N5458 Datasheet (PDF)

1.1. 2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf Size:129K _fairchild_semi

2N5458
2N5458

2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbo

1.2. 2n5457 2n5458 2n5459.pdf Size:59K _central

2N5458

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

 1.3. 2n5457 2n5458.pdf Size:138K _onsemi

2N5458
2N5458

2N5457, 2N5458 JFETs - General Purpose N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. http://onsemi.com Features 1 DRAIN N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance 3 High DC Input Resistance GATE Low Transfer and Input Capacitance Low Cross-Mo

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