2N5458 Datasheet and Replacement
Type Designator: 2N5458
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 3.5 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
|Id| ⓘ - Maximum Drain Current: 0.009 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Package: TO-92
2N5458 substitution
2N5458 Datasheet (PDF)
2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf

2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS
2n5457 2n5458 2n5459.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5457 2n5458.pdf

2N5457, 2N5458JFETs - General PurposeN-Channel - DepletionN-Channel Junction Field Effect Transistors, depletion mode(Type A) designed for audio and switching applications.http://onsemi.comFeatures1 DRAIN N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance3 High DC Input Resistance GATE Low Transfer and Input Capacitance
2n5457re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5457/DJFETs General Purpose2N5457NChannel Depletion1 DRAIN*Motorola Preferred Device3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit123DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcCASE 2904, STYLE 5Reverse GateSource Voltage VGSR 25 VdcTO92 (TO226AA)
Datasheet: 2N5398 , 2N5432 , 2N5433 , 2N5434 , 2N5452 , 2N5453 , 2N5454 , 2N5457 , 2SK3878 , 2N5459 , 2N5460 , 2N5461 , 2N5462 , 2N5515 , 2N5516 , 2N5517 , 2N5518 .
Keywords - 2N5458 MOSFET datasheet
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