2N5952 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5952
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.36 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 3 V
Corriente continua de drenaje (Id): 0.008 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Empaquetado / Estuche: TO-92-18R
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2N5952 Datasheet (PDF)
1.1. 2n5952.pdf 
Size:25K _fairchild_semi
2N5952 N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA T
1.2. 2n5949 2n5950 2n5951 2n5952 2n5953.pdf Size:71K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
5.1. 2n5950.pdf Size:97K _fairchild_semi
September 2007 2N5950 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Cu
5.2. 2n5951.pdf Size:100K _fairchild_semi
September 2007 2N5951 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Cu
5.3. 2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf Size:114K _central
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
5.4. 2n5956.pdf Size:10K _semelab
2N5956 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifica
5.5. 2n5954 2n5955 2n5956.pdf Size:131K _jmnic
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION ·With TO-66 package ·Low collector-emitter saturation voltage ·Excellent safe operating area ·Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi
5.6. 2n5954 2n5955 2n5956.pdf Size:126K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area Ў¤ Complement to type 2N6372/6373/6374 APPLICATIONS Ў¤ Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
