2N5952 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5952

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.36 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 3 V

Corriente continua de drenaje (Id): 0.008 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: TO-92-18R

Búsqueda de reemplazo de MOSFET 2N5952

2N5952 Datasheet (PDF)

1.1. 2n5952.pdf Size:25K _fairchild_semi

2N5952 N-Channel RF Ampifier � This device is designed primarily for electronic switching applications such as low on resistance analog switching. � Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25�C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA T

1.2. 2n5949 2n5950 2n5951 2n5952 2n5953.pdf Size:71K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 � Fax: (631) 435-1824

5.1. 2n5951.pdf Size:100K _fairchild_semi

September 2007 2N5951 N-Channel RF Amplifier � This device is designed primarily for electronic switching applications such as low on resistance analog switching. � Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25�C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Cu

5.2. 2n5950.pdf Size:97K _fairchild_semi

September 2007 2N5950 N-Channel RF Amplifier � This device is designed primarily for electronic switching applications such as low on resistance analog switching. � Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25�C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Cu

5.3. 2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf Size:114K _central

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 � Fax: (631) 435-1824 www.centralsemi.com

5.4. 2n5956.pdf Size:10K _semelab

2N5956 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifica

5.5. 2n5954 2n5955 2n5956.pdf Size:131K _jmnic

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION ·With TO-66 package ·Low collector-emitter saturation voltage ·Excellent safe operating area ·Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi

5.6. 2n5954 2n5955 2n5956.pdf Size:126K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area Ў¤ Complement to type 2N6372/6373/6374 APPLICATIONS Ў¤ Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: