2N5952 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5952
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 3 V
|Id|ⓘ - Corriente continua de drenaje: 0.008 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: TO-92-18R
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2N5952 Datasheet (PDF)
2n5952.pdf

2N5952N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current
2n5949 2n5950 2n5951 2n5952 2n5953.pdf

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2n5951.pdf

September 20072N5951N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward
2n5950.pdf

September 20072N5950N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward
Otros transistores... 2N5907 , 2N5908 , 2N5909 , 2N5911 , 2N5912 , 2N5949 , 2N5950 , 2N5951 , STP80NF70 , 2N5953 , 2N6449 , 2N6450 , 2N6451 , 2N6452 , 2N6453 , 2N6454 , 2N6804 .
History: FXN4611F | DMG4511SK4 | 40601 | BUK437-500A | DMG4406LSS | IPD035N06L3G | 18P10I
History: FXN4611F | DMG4511SK4 | 40601 | BUK437-500A | DMG4406LSS | IPD035N06L3G | 18P10I



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