2N5952 Spec and Replacement
Type Designator: 2N5952
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 0.008 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Package: TO-92-18R
2N5952 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N5952 Specs
2n5952.pdf
2N5952 N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current ... See More ⇒
2n5949 2n5950 2n5951 2n5952 2n5953.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2n5951.pdf
September 2007 2N5951 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward... See More ⇒
2n5950.pdf
September 2007 2N5950 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward... See More ⇒
Detailed specifications: 2N5907 , 2N5908 , 2N5909 , 2N5911 , 2N5912 , 2N5949 , 2N5950 , 2N5951 , 10N65 , 2N5953 , 2N6449 , 2N6450 , 2N6451 , 2N6452 , 2N6453 , 2N6454 , 2N6804 .
Keywords - 2N5952 MOSFET specs
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