BF246B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF246B
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 4 V
|Id|ⓘ - Corriente continua de drenaje: 0.14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Encapsulados: TO-92
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BF246B datasheet
bf246a bf246b bf246c bf247a bf247b bf247c.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF246A; BF246B; BF246C; field-effect transistors BF247A; BF247B; BF247C F
bf246a.pdf
September 2007 BF246A N-Channel Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 51. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 39 V VGS Gate-Source Voltage -30 V IGF Forward Ga
bf246.pdf
BF246B N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from process 51. See J111 for characteristics. TO-92 D G S 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltag
Otros transistores... 2N6453 , 2N6454 , 2N6804 , 2N6806 , 2N7091 , 2N7288D , 2N7288R , 2N7288H , 75N75 , BF247A , BST100 , BST70A , BUZ326 , FJN598J , FJX597JB , FS10KM-10 , FS3KM-10 .
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