BF246B MOSFET. Datasheet pdf. Equivalent
Type Designator: BF246B
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.625 W
Maximum Drain-Source Voltage |Vds|: 25 V
Maximum Gate-Source Voltage |Vgs|: 4 V
Maximum Drain Current |Id|: 0.14 A
Maximum Junction Temperature (Tj): 150 °C
Package: TO-92
BF246B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF246B Datasheet (PDF)
0.1. bf246a bf246b bf246c bf247a bf247b bf247c.pdf 
Size:37K _philips
DISCRETE SEMICONDUCTORSDATA SHEETBF246A; BF246B; BF246C;BF247A; BF247B; BF247CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction BF246A; BF246B; BF246C;field-effect transistors BF247A; BF247B; BF247CF
9.1. bf246a.pdf Size:93K _fairchild_semi
September 2007BF246AN-Channel Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 51.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 39 VVGS Gate-Source Voltage -30 VIGF Forward Ga
9.2. bf246.pdf Size:100K _fairchild_semi
BF246B N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from process 51. See J111 for characteristics.TO-92D G S1. Drain 2. Gate 3. SourceAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltag
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4435 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
