BF246B Datasheet. Specs and Replacement
Type Designator: BF246B 📄📄
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 0.14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSoff|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.6 V
Package: TO-92
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BF246B substitution
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BF246B datasheet
bf246a bf246b bf246c bf247a bf247b bf247c.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF246A; BF246B; BF246C; field-effect transistors BF247A; BF247B; BF247C F... See More ⇒
bf246a.pdf
September 2007 BF246A N-Channel Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 51. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 39 V VGS Gate-Source Voltage -30 V IGF Forward Ga... See More ⇒
bf246.pdf
BF246B N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from process 51. See J111 for characteristics. TO-92 D G S 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltag... See More ⇒
Detailed specifications: 2N6453, 2N6454, 2N6804, 2N6806, 2N7091, 2N7288D, 2N7288R, 2N7288H, 75N75, BF247A, BST100, BST70A, BUZ326, FJN598J, FJX597JB, FS10KM-10, FS3KM-10
Keywords - BF246B MOSFET specs
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