BF246B MOSFET. Datasheet pdf. Equivalent
Type Designator: BF246B
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.625 W
Maximum Drain-Source Voltage |Vds|: 25 V
Maximum Gate-Source Voltage |Vgs|: 4 V
Maximum Drain Current |Id|: 0.14 A
Maximum Junction Temperature (Tj): 150 °C
Package: TO-92
BF246B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF246B Datasheet (PDF)
1.1. bf246a bf246b bf246c bf247a bf247b bf247c.pdf 
Size:37K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF246A; BF246B; BF246C; field-effect transistors BF247A; BF247B; BF247C FEAT
5.1. bf246.pdf Size:100K _fairchild_semi
BF246B N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from process 51. See J111 for characteristics. TO-92 D G S 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V I
5.2. bf246a.pdf Size:93K _fairchild_semi
September 2007 BF246A N-Channel Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 51. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 39 V VGS Gate-Source Voltage -30 V IGF Forward Gate Curre
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