BF246B
MOSFET. Datasheet pdf. Equivalent
Type Designator: BF246B
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.6
V
|Id|ⓘ - Maximum Drain Current: 0.14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Package:
TO-92
BF246B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF246B
Datasheet (PDF)
..1. Size:37K philips
bf246a bf246b bf246c bf247a bf247b bf247c.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBF246A; BF246B; BF246C;BF247A; BF247B; BF247CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction BF246A; BF246B; BF246C;field-effect transistors BF247A; BF247B; BF247CF
9.1. Size:93K fairchild semi
bf246a.pdf
September 2007BF246AN-Channel Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 51.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 39 VVGS Gate-Source Voltage -30 VIGF Forward Ga
9.2. Size:100K fairchild semi
bf246.pdf
BF246B N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from process 51. See J111 for characteristics.TO-92D G S1. Drain 2. Gate 3. SourceAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltag
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