BUZ326 Todos los transistores

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BUZ326 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ326

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 400 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 65 nS

Conductancia de drenaje-sustrato (Cd): 210 pF

Resistencia drenaje-fuente RDS(on): 0.35 Ohm

Empaquetado / Estuche: TO-218AA

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BUZ326 Datasheet (PDF)

1.1. buz326.pdf Size:219K _siemens

BUZ326
BUZ326

BUZ 326 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 326 400 V 10.5 A 0.5 ? TO-218 AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 27 C 10.5 Pulsed drain current IDpuls TC = 25 C 42 Avalanche current,limited by Tjmax IAR 10.5 Aval

5.1. buz32.pdf Size:282K _st2

BUZ326
BUZ326

5.2. buz323.pdf Size:114K _siemens

BUZ326
BUZ326

BUZ 323 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 323 400 V 15 A 0.3 ? TO-218 AA C67078-S3127-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 15 Pulsed drain current IDpuls TC = 25 C 60 Avalanche current,limited by Tjmax IAR 15 Avalanche

5.3. buz325.pdf Size:226K _siemens

BUZ326
BUZ326

BUZ 325 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 325 400 V 12.5 A 0.35 ? TO-218 AA C67078-S3118-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 27 C 12.5 Pulsed drain current IDpuls TC = 25 C 50 Avalanche current,limited by Tjmax IAR 12.5 Ava

5.4. buz32h rev2.4.pdf Size:402K _infineon

BUZ326
BUZ326

BUZ 32 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Pb-free BUZ 32 H 200 V 9.5 A 0.4 ? PG-TO-220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 ?C 9.5 Pulsed drain current IDpuls TC = 25 ?C 38 Avalanche current,li

5.5. buz32.pdf Size:90K _infineon

BUZ326
BUZ326

BUZ 32 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 32 200 V 9.5 A 0.4 ? TO-220 AB C67078-S1310-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 ?C 9.5 Pulsed drain current IDpuls TC = 25 ?C 38 Avalanche current,limited by Tjmax IAR 9.5 Avalanc

5.6. buz32h3045arev2.2.pdf Size:1225K _infineon

BUZ326
BUZ326

BUZ 32 H3045A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 Pb-free PG-TO263-3 BUZ32 H3045A Yes Rev. 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A 2009-11-10 Rev 2.2 BUZ 32 H3045A 2009-11-10 Rev 2.2 BUZ32 H3045A Rev 2.2 2009-11-10 BUZ 32 H3045A Rev 2.2

Otros transistores... 2N7091 , 2N7288D , 2N7288R , 2N7288H , BF246B , BF247A , BST100 , BST70A , IRF9540N , FJN598J , FJX597JB , FS10KM-10 , FS3KM-10 , PS0151 , IPS0151S , ISL9N303AP3 , ISL9N303AS3ST .

 


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