BUZ326 Specs and Replacement
Type Designator: BUZ326
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-218AA
BUZ326 substitution
- MOSFET ⓘ Cross-Reference Search
BUZ326 datasheet
buz326.pdf
BUZ 326 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 326 400 V 10.5 A 0.5 TO-218 AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 27 C 10.5 Pulsed drain current IDpuls TC = 25 C 42 Avalanche current,limited by Tjmax ... See More ⇒
buz326.pdf
isc N-Channel Mosfet Transistor BUZ326 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc... See More ⇒
buz323.pdf
BUZ 323 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 323 400 V 15 A 0.3 TO-218 AA C67078-S3127-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 15 Pulsed drain current IDpuls TC = 25 C 60 Avalanche current,limited by Tjmax IAR ... See More ⇒
Detailed specifications: 2N7091, 2N7288D, 2N7288R, 2N7288H, BF246B, BF247A, BST100, BST70A, IRF1405, FJN598J, FJX597JB, FS10KM-10, FS3KM-10, PS0151, IPS0151S, ISL9N303AP3, ISL9N303AS3ST
Keywords - BUZ326 MOSFET specs
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