J175 Todos los transistores

 ..1. Size:30K  philips
 j174 j175 j176 j177 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification J174; J175; P-channel silicon field-effect transistors J176; J177 DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intend

 ..2. Size:728K  fairchild semi
 j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf

J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark 6W / 6X / 6Y NOTE Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units

 ..3. Size:56K  vishay
 j174 j175 j176 j177 sst174 sst175 sst176 sst177.pdf

J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 SST174 J175 SST175 J176 SST176 J177 SST177 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 5 to 10 85 10 25 J/SST175 3 to 6 125 10 25 J/SST176 1 to 4 250 10 25 J/SST177 0.8 to 2.25 300 10 25 FEATURES BENEFITS APPLICATIONS D Low On-Resistance J174

 0.1. Size:76K  motorola
 mmbfj175.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 P Channel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Drain Gate Voltage VDG 25 V Reverse Gate Source Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Charact

 0.2. Size:56K  motorola
 mmbfj175lt1rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 P Channel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Drain Gate Voltage VDG 25 V Reverse Gate Source Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Charact

 0.3. Size:31K  philips
 pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are int

 0.4. Size:57K  nxp
 pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 0.5. Size:202K  central
 cmpfj175 cmpfj176.pdf

CMPFJ174 CMPFJ175 CMPFJ176 www.centralsemi.com CMPFJ177 DESCRIPTION SURFACE MOUNT SILICON The CENTRAL SEMICONDUCTOR CMPFJ174 P-CHANNEL JFETS Series devices are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications. MARKING CODES CMPFJ174 6V CMPFJ175 6W CMPFJ176 6X CMPFJ177 6Y SOT-23 CASE MAXIMUM RATINGS (TA=25 C)

 0.6. Size:105K  onsemi
 mmbfj175lt1.pdf

MMBFJ175LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 25 V Reverse Gate-Source Voltage VGS(r) -25 V 1 DRAIN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, PD

 0.7. Size:29K  hitachi
 2sj175.pdf

2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ175 Abso

 0.8. Size:23K  semelab
 sml20j175.pdf

SML20J175 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

 0.9. Size:181K  semelab
 sml20j175f.pdf

N-CHANNEL POWER MOSFET SML20J175 Fast Switching and Low leakage 100% Avalanche Tested Popular SOT-227 Package StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFET s. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieve faster switching speeds through optimised