J177 Todos los transistores

 ..1. Size:30K  philips
 j174 j175 j176 j177 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification J174; J175; P-channel silicon field-effect transistors J176; J177 DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intend

 ..2. Size:728K  fairchild semi
 j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf

J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark 6W / 6X / 6Y NOTE Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units

 ..3. Size:56K  vishay
 j174 j175 j176 j177 sst174 sst175 sst176 sst177.pdf

J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 SST174 J175 SST175 J176 SST176 J177 SST177 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 5 to 10 85 10 25 J/SST175 3 to 6 125 10 25 J/SST176 1 to 4 250 10 25 J/SST177 0.8 to 2.25 300 10 25 FEATURES BENEFITS APPLICATIONS D Low On-Resistance J174

 0.1. Size:57K  motorola
 mmbfj177lt1rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ177LT1/D JFET Chopper P Channel Depletion MMBFJ177LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Gate Voltage VDG 25 Vdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Reverse Gate Source Voltage VGS(r) 25 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit

 0.2. Size:31K  philips
 pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are int

 0.3. Size:57K  nxp
 pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 0.4. Size:109K  onsemi
 mmbfj177lt1-d.pdf

MMBFJ177LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 1 DRAIN Reverse Gate-Source Voltage VGS(r) -25 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings

 0.5. Size:29K  hitachi
 2sj177.pdf

2SJ177 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ177 Abso

 0.6. Size:796K  cn vbsemi
 2sj177.pdf

2SJ177 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.050 at VGS = - 10 V - 30 - 60 67 100 % Rg and UIS Tested 0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/EC TO-220 FULLPAK S G S D D G P-Channel MO