DISCRETE SEMICONDUCTORSDATA SHEETJ174; J175;J176; J177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationJ174; J175;P-channel silicon field-effect transistorsJ176; J177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in a plastic TO-92envelope and intend

J174 MMBFJ175J175 MMBFJ176J176 MMBFJ177J177GSS TO-92DSOT-23GDMark: 6W / 6X / 6YNOTE: Source & Drain are interchangeableP-Channel SwitchThis device is designed for low level analog switching sample and holdcircuits and chopper stabilized amplifiers. Sourced from Process 88.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units

J/SST174/175/176/177 SeriesVishay SiliconixP-Channel JFETsJ174 SST174J175 SST175J176 SST176J177 SST177PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST174 5 to 10 85 10 25J/SST175 3 to 6 125 10 25J/SST176 1 to 4 250 10 25J/SST177 0.8 to 2.25 300 10 25FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J174

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ177LT1/DJFET ChopperPChannel Depletion MMBFJ177LT12 SOURCE3GATE1 DRAIN31MAXIMUM RATINGS2Rating Symbol Value UnitDrainGate Voltage VDG 25 VdcCASE 31808, STYLE 10SOT23 (TO236AB)Reverse GateSource Voltage VGS(r) 25 VdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

MMBFJ177LT1GJFET ChopperP-Channel - DepletionFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliant2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc1 DRAINReverse Gate-Source Voltage VGS(r) -25 VdcStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings

2SJ177Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ177Abso

2SJ177www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.050 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECTO-220 FULLPAK SGS DDGP-Channel MO