MMBFJ176 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBFJ176
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 4.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.025 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 250 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de MMBFJ176 MOSFET
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MMBFJ176 datasheet
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf
J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark 6W / 6X / 6Y NOTE Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units
mmbfj175.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 P Channel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Drain Gate Voltage VDG 25 V Reverse Gate Source Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Charact
mmbfj175lt1rev0d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 P Channel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Drain Gate Voltage VDG 25 V Reverse Gate Source Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Charact
mmbfj177lt1rev0d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ177LT1/D JFET Chopper P Channel Depletion MMBFJ177LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Gate Voltage VDG 25 Vdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Reverse Gate Source Voltage VGS(r) 25 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Otros transistores... J106 , J107 , JFTJ105 , J174 , J175 , J176 , J177 , MMBFJ175 , IRFZ44N , MMBFJ177 , J201 , J202 , MMBFJ201 , MMBFJ202 , J210 , MMBFJ210 , MMBFJ211 .
History: 2SK55 | DMN67D8L | AO6806 | AOB442 | STD20NF06L | AO3419L | 2SK4078B-ZK
History: 2SK55 | DMN67D8L | AO6806 | AOB442 | STD20NF06L | AO3419L | 2SK4078B-ZK
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