MMBFJ176
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMBFJ176
Marking Code: 6S_6X
Type of Transistor: JFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.225
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4.5
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 0.025
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 250
Ohm
Package:
SOT-23
MMBFJ176
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMBFJ176
Datasheet (PDF)
..1. Size:728K fairchild semi
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf
J174 MMBFJ175J175 MMBFJ176J176 MMBFJ177J177GSS TO-92DSOT-23GDMark: 6W / 6X / 6YNOTE: Source & Drain are interchangeableP-Channel SwitchThis device is designed for low level analog switching sample and holdcircuits and chopper stabilized amplifiers. Sourced from Process 88.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units
7.1. Size:76K motorola
mmbfj175.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ175LT1/DJFET ChopperMMBFJ175LT1PChannel DepletionMotorola Preferred Device2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 10SOT23 (TO236AB)DrainGate Voltage VDG 25 VReverse GateSource Voltage VGS(r) 25 VTHERMAL CHARACTERISTICSCharact
7.2. Size:56K motorola
mmbfj175lt1rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ175LT1/DJFET ChopperMMBFJ175LT1PChannel DepletionMotorola Preferred Device2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 10SOT23 (TO236AB)DrainGate Voltage VDG 25 VReverse GateSource Voltage VGS(r) 25 VTHERMAL CHARACTERISTICSCharact
7.3. Size:57K motorola
mmbfj177lt1rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ177LT1/DJFET ChopperPChannel Depletion MMBFJ177LT12 SOURCE3GATE1 DRAIN31MAXIMUM RATINGS2Rating Symbol Value UnitDrainGate Voltage VDG 25 VdcCASE 31808, STYLE 10SOT23 (TO236AB)Reverse GateSource Voltage VGS(r) 25 VdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit
7.4. Size:109K onsemi
mmbfj177lt1-d.pdf
MMBFJ177LT1GJFET ChopperP-Channel - DepletionFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliant2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc1 DRAINReverse Gate-Source Voltage VGS(r) -25 VdcStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings
7.5. Size:105K onsemi
mmbfj175lt1.pdf
MMBFJ175LT1GJFET ChopperP-Channel - DepletionFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant2 SOURCEMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain-Gate Voltage VDG 25 VReverse Gate-Source Voltage VGS(r) -25 V1 DRAINTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR-5 Board, PD
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